Freescale Semiconductor
Technical Data
Document Number: MRF8P20140WH
Rev. 1, 11/2013
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 500 mA, V
GSB
= 1.2 Vdc, P
out
= 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
1880 MHz
1920 MHz
2025 MHz
G
ps
(dB)
16.0
16.0
15.9
D
(%)
42.8
43.7
42.0
Output PAR
(dB)
8.0
8.1
8.1
ACPR
(dBc)
--31.0
--32.6
--31.2
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WGHSR3
1880-
-2025 MHz, 24 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
Typical P
out
@ 3 dB Compression Point
≃
170 Watts
(1)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBW
res
≃
240 MHz.
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13--inch Reel.
NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm
Tape Width, 13--inch Reel.
NI-
-780H-
-4L
MRF8P20140WHR3
NI-
-780S-
-4L
MRF8P20140WHSR3
NI-
-780GS-
-4L
MRF8P20140WGHSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
1. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
140
0.66
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 24 W CW, 28 Vdc, I
DQA
= 500 mA, V
GSB
= 1.2 Vdc, 1920 MHz
Case Temperature 96C, 130 W CW
(3)
, 28 Vdc, I
DQA
= 500 mA, V
GSB
= 1.2 Vdc, 1920 MHz
Symbol
R
JC
Value
(2,3)
0.68
0.40
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4,5)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DA
= 500 mAdc)
Fixture Gate Quiescent Voltage
(6)
(V
DD
= 28 Vdc, I
DA
= 500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
GS(th)
V
GSA(Q)
V
GGA(Q)
V
DS(on)
1.1
—
4.5
0.1
1.8
2.6
5.2
0.2
2.6
—
6.0
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Each side of device measured separately.
6. V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
7. V
GG
= 2.0 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3,4)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 1.2 Vdc,
P
out
= 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
D
PAR
ACPR
15.0
37.5
7.3
—
16.0
41.2
7.7
--31.9
18.0
—
—
--29.5
dB
%
dB
dBc
Typical Performance over Frequency
(3)
—
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 1.2
Vdc, P
out
= 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Frequency
1880 MHz
1920 MHz
2025 MHz
G
ps
(dB)
16.0
16.0
15.9
D
(%)
42.8
43.7
42.0
Output PAR
(dB)
8.0
8.1
8.1
ACPR
(dBc)
--31.0
--32.6
--31.2
Typical Performances
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 1.2 Vdc,
1880--2025 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(5)
IMD Symmetry @ 24 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 145 MHz Bandwidth @ P
out
= 24 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
(6)
1.
2.
3.
4.
P1dB
P3dB
IMD
sym
—
—
—
140
170
133
—
—
—
W
W
MHz
VBW
res
G
F
G
P1dB
—
—
—
—
240
0.25
0.013
0.003
—
—
—
—
MHz
dB
dB/C
dB/C
V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GHS) parts.
5. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R2
V
GGA
C18
V
DDA
C19
R3
C15
C4
C16
C14
C6 C7
C1
C2*
C9
Z1
C3*
R1
C5
C10 C11
C26
R6
C23
C
CUT OUT AREA
C12*
MRF8P20140W
Rev. 1.2
C17
P
C21
C13*
R7
C22
C8
R5
C20
C25
R4
V
GGB
C24
V
DDB
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.
Note 2: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout
Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part
C1
C2, C3
C4, C8, C18, C24
C5
C6, C10, C12, C13, C14,
C20
C7, C11
C9, C17
C15, C21
C16, C22
C19, C25
C23
C26
R1
R2, R3, R4, R5
R6, R7
Z1
PCB
Description
0.6 pF Chip Capacitor
8.2 pF Chip Capacitors
10
F,
50 V Chip Capacitors
1.2 pF Chip Capacitor
12 pF Chip Capacitors
10
F,
32 V Chip Capacitors
0.1 pF Chip Capacitors
6.8
F,
50 V Chip Capacitors
2.2
F,
100 V Chip Capacitors
220
F,
100 V Chip Capacitors
0.2 pF Chip Capacitor
1.5 pF Chip Capacitor
50
,
Chip Resistor
1.5 k, 1/4 W Chip Resistors
2.2
,
1/4 W Chip Resistors
1700--2000 MHz Band 90, 3 dB Hybrid Coupler
0.020,
r
= 3.5
Part Number
ATC600F0R6BT250XT
ATC600F8R2BT250XT
GRM55DR61H106KA88L
ATC600F1R2BT250XT
ATC600F120JT250XT
GRM32ER61H106KA12L
ATC600F0R1BT250XT
C4532X7R1H685KT
C3225X7R2A225KT
EEV--FK2A221M
ATC600F0R2BT250XT
ATC600F1R5BT250XT
ATCCW12010T0050GBK
CRCW12061K50FKEA
CRCW12062R2FNEA
1P503S
R04350B
Manufacturer
ATC
ATC
Murata
ATC
ATC
Murata
ATC
TDK
TDK
Panasonic--ECG
ATC
ATC
ATC
Vishay
Vishay
Anaren
Rogers
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
Single--ended
4
4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
